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SPW47N65C3 coolmos tm power transistor features ? worldwide best r ds,on in to247 ? low gate charge ? extreme dv/dt rated ? high peak current capability ? qualified according to jedec 1) for target applications ? pb-free lead plating; rohs compliant maximum ratings, at t j =25 c, unless otherwise specified parameter symbol conditions unit continuous drain current i d t c =25 c a t c =100 c pulsed drain current 2) i d,pulse t c =25 c avalanche energy, single pulse e as i d =3.5 a, v dd =50 v 1800 mj avalanche energy, repetitive t ar 2),3) e ar i d =7 a, v dd =50 v avalanche current, repetitive t ar 2),3) i ar a mosfet d v /d t ruggedness d v /d t v ds =0...480 v v/ns gate source voltage v gs static v ac ( f >1 hz) power dissipation p tot t c =25 c w operating and storage temperature t j , t stg c mounting torque m3 and m3.5 screws 60 ncm 30 415 -55 ... 150 1 7 50 20 value 47 30 141 v ds 650 v r ds(on),max 0.07 ? q g,typ 255 nc product summary pg-to247-3-1 type package SPW47N65C3 pg-to247-3-1 marking 47n65c3 rev. 1.2 page 1 2008-02-12 please note the new package dimensions arccording to pcn 2009-134-a
SPW47N65C3 maximum ratings, at t j =25 c, unless otherwise specified parameter symbol conditions unit continuous diode forward current i s a diode pulse current 2) i s,pulse 141 parameter symbol conditions unit min. typ. max. thermal characteristics thermal resistance, junction - case r thjc - - 0.3 k/w r thja leaded - - 62 soldering temperature, wavesoldering only allowed at leads t sold 1.6 mm (0.063 in.) from case for 10 s - - 260 c electrical characteristics, at t j =25 c, unless otherwise specified static characteristics drain-source breakdown voltage v (br)dss v gs =0 v, i d =250 a 650 - - v gate threshold voltage v gs(th) v ds = v gs , i d =2.7 ma 2.1 3 3.9 zero gate voltage drain current i dss v ds =600 v, v gs =0 v, t j =25 c - 0.5 25 a v ds =600 v, v gs =0 v, t j =150 c -50- gate-source leakage current i gss v gs =20 v, v ds =0 v - - 100 na drain-source on-state resistance r ds(on) v gs =10 v, i d =30 a, t j =25 c - 0.06 0.07 ? v gs =10 v, i d =30 a, t j =150 c - 0.17 - gate resistance r g f =1 mhz, open drain - 0.75 - ? value t c =25 c 47 values thermal resistance, junction - ambient rev. 1.2 page 2 2008-02-12 please note the new package dimensions arccording to pcn 2009-134-a
SPW47N65C3 parameter symbol conditions unit min. typ. max. dynamic characteristics input capacitance c iss - 7000 - pf output capacitance c oss - 2300 - effective output capacitance, energy related 5) c o(er) - 270 - effective output capacitance, time related 6) c o(tr) - 490 - turn-on delay time t d(on) - 100 - ns rise time t r -27- turn-off delay time t d(off) - 210 - fall time t f -14- gate charge characteristics gate to source charge q gs -35-nc gate to drain charge q gd - 120 - gate charge total q g - 255 - gate plateau voltage v plateau - 5.5 - v reverse diode diode forward voltage v sd v gs =0 v, i f =47 a, t j =25 c - 0.9 1.2 v reverse recovery time t rr - 640 - ns reverse recovery charge q rr -19-c peak reverse recovery current i rrm -56-a 1) j-std20 and jesd22 2) pulse width t p limited by t j,max v r =480 v, i f = i s , d i f /d t =100 a/s 5) c o(er) is a fixed capacitance that gives the same stored energy as c oss while v ds is rising from 0 to 80% v dss. 6) c o(tr) is a fixed capacitance that gives the same charging time as c oss while v ds is rising from 0 to 80% v dss. 3) repetitive avalanche causes additional power losses that can be calculated as p av = e ar * f. values v gs =0 v, v ds =25 v, f =1 mhz v dd =400 v, v gs =10 v, i d =47 a, r g =5.6 ? v dd =480 v, i d =47 a, v gs =0 to 10 v v gs =0 v, v ds =0 v to 480 v rev. 1.2 page 3 2008-02-12 please note the new package dimensions arccording to pcn 2009-134-a
SPW47N65C3 1 power dissipation 2 safe operating area p tot =f( t c ) i d =f( v ds ); t c =25 c; d =0 parameter: t p 3 max. transient thermal impedance 4 typ. output characteristics z (thjc) =f(t p ) i d =f( v ds ); t j =25 c parameter: d=t p / t parameter: v gs 0 100 200 300 400 500 0 40 80 120 160 t c [c] p tot [w] 1 s 10 s 100 s 1 ms 10 ms dc 10 3 10 2 10 1 10 0 10 3 10 2 10 1 10 0 10 -1 v ds [v] i d [a] single pulse 0.01 0.02 0.05 0.1 0.2 0.5 10 0 10 -1 10 -2 10 -3 10 -4 10 -5 10 0 10 -1 10 -2 10 -3 t p [s] z thjc [k/w] 4.5 v 5 v 5 v 5.5 v 6 v 6.5 v 7 v 20 v 0 50 100 150 200 0 5 10 15 20 25 v ds [v] i d [a] limited by on-state resistance rev. 1.2 page 4 2008-02-12 please note the new package dimensions arccording to pcn 2009-134-a
SPW47N65C3 5 typ. output characteristics 6 typ. drain-source on-state resistance i d =f( v ds ); t j =150 c r ds(on) =f( i d ); t j =150 c parameter: v gs parameter: v gs 7 drain-source on-state resistance 8 typ. transfer characteristics r ds(on) =f( t j ); i d =30 a; v gs =10 v i d =f( v gs ); | v ds |>2| i d | r ds(on)max parameter: t j typ 98 % 0 0.04 0.08 0.12 0.16 0.2 -50 0 50 100 150 t j [c] r ds(on) [ ? ] 25c 150c 0 50 100 150 200 0246810 v gs [v] i d [a] 4.5 v 5 v 5.5 v 6 v 6.5 v 7 v 10 v 20 v 0 20 40 60 80 100 120 0 5 10 15 20 25 v ds [v] i d [a] 4 v 4.5 v 5 v 5.5 v 6 v 6.5 v 20 v 0.1 0.3 0.5 0.7 0 40 80 120 160 i d [a] r ds(on) [ ? ] rev. 1.2 page 5 2008-02-12 please note the new package dimensions arccording to pcn 2009-134-a
SPW47N65C3 9 typ. gate charge 10 forward characteristics of reverse diode v gs =f( q gate ); i d =47 a pulsed i f =f( v sd ) parameter: v dd parameter: t j 11 avalanche energy 12 drain-source breakdown voltage e as =f( t j ); i d =3.5 a; v dd =50 v v br(dss) =f( t j ); i d =0.25 ma 25 c 150 c 25 c, 98% 150 c, 98% 10 3 10 2 10 1 10 0 0 0.5 1 1.5 2 v sd [v] i f [a] 120 v 480 v 0 2 4 6 8 10 0 40 80 120 160 200 240 q gate [nc] v gs [v] 590 620 650 680 710 -60 -20 20 60 100 140 180 t j [c] v br(dss) [v] 0 200 400 600 800 1000 1200 1400 1600 1800 2000 25 50 75 100 125 150 175 t j [c] e as [mj] rev. 1.2 page 6 2008-02-12 please note the new package dimensions arccording to pcn 2009-134-a
SPW47N65C3 13 typ. capacitances 14 typ. coss stored energy c =f( v ds ); v gs =0 v; f =1 mhz e oss = f (v ds ) 0 10 20 30 40 50 0 200 400 600 v ds [v] e oss [j] ciss coss crss 10 5 10 4 10 3 10 2 10 1 10 0 0 100 200 300 400 500 v ds [v] c [pf] rev. 1.2 page 7 2008-02-12 please note the new package dimensions arccording to pcn 2009-134-a
SPW47N65C3 definition of diode switching characteristics rev. 1.2 page 8 2008-02-12 please note the new package dimensions arccording to pcn 2009-134-a
SPW47N65C3 pg-to-247-3-1: outlines rev. 1.2 page 9 2008-02-12 please note the new package dimensions arccording to pcn 2009-134-a
. rev. 1.2 page 10 2008-02-12 SPW47N65C3 published by infineon technologies ag 81726 munich, germany ? 2008 infineon technologies ag all rights reserved. legal disclaimer the information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. with respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the appl ication of the device, infineon technologies hereby disclaims any and all warranties and liabilitie s of any kind, including without limitation, warranties of non-infringement of intellect ual property rights of any third party. information for further information on technology, delivery terms and conditions and prices, please contact the nearest infineon technologies office ( www.infineon.com ). warnings due to technical requirements, components may contain dangerous substances. for information on the types in question, please contact t he nearest infineon technologies office. infineon technologies components may be used in life-support devices or systems only with the express written approval of infineon technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. if they fail, it is reasonable to assume that the health of the user or other persons may be endangered. please note the new package dimensions arccording to pcn 2009-134-a
data sheet erratum pcn 2009-134-a new package outlines to-247 final data sheet erratum rev. 2.0, 2010-02-01 1 new package outlines to-247 assembly capacity extension for coolmostm technology products assembled in lead-free package pg-to247-3 at subcon tractor ase (weihai) inc., chin a (changes are marked in blue . ) figure 1 outlines to-247, dimensions in mm/inches

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